The integrated, gate-commutated thyristor (IGCT) is a power semiconductor device, used for switching electric current in industrial equipment. It is related to the gate turn-off (GTO) thyristor.
Mitsubishi and ABB jointly developed the device. Like the GTO thyristor, the IGCT is a fully controllable power switch, meaning that it can be turned both on and off by its control terminal (the gate). Gate drive electronics are integrated with the thyristor device.
Description
alt=|thumb|Top view of a typical 91mm wafer gate-commutated thyristor with cathode segments arranged in 10 concentric rings and the gate contact placed between Ring 5 and Ring 6
[[File:1 GCT cut.svg|thumb|Typical structure and doping of a gate-commutated thyristor (GCT)
In high power applications, IGCTs are sensitive to cosmic rays. To decrease cosmic ray induced malfunctions, more thickness in the n<sup>−</sup> base is required.